EDN: ISSI Announces SRAM, DRAM, and EEPROM Memory with Copper Leadframes for Automotive and Industrial Applications
ISSI Announces SRAM, DRAM, and EEPROM Memory with Copper Leadframes for Automotive and Industrial Applications
Ars Technica: 4T SRAM, 6T SRAM, EDRAM, DRAM, and 1T-SRAM for CPUs
These are various forms of local, on-chip memory. Except for the DRAM. 4T (4 transistor) SRAM takes up 4 times the space that regular DRAM does 1T-SRAM seems to be a hybrid of DRAM that allows for ...
Tokyo – Renesas Technology Corp. has developed a new SRAM memory cell structure that combines SRAM and DRAM technologies. The device is about half the size of a conventional SRAM cell, but still has ...
Infineon Technologies A.G. has begun sampling 256Mbit reduced latency DRAM, a new memory architecture aimed at displacing SRAM in high-speed networking and fast-cache applications. Based on ...
For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...
KSL: Spin Transfer Technologies Announces Breakthrough MRAM Technology for SRAM and DRAM Applications
Spin Transfer Technologies Announces Breakthrough MRAM Technology for SRAM and DRAM Applications
Digi Times: Niche SRAM and DRAM and TFT LCD driver ICs may be squeezed by rising foundry utilization rates
According to some niche SRAM and DRAM and TFT LCD driver IC design firms, increasing foundry utilization rates for high and low-end processing may limit their production and lead to higher prices.
Niche SRAM and DRAM and TFT LCD driver ICs may be squeezed by rising foundry utilization rates